Invention Grant
US09406812B1 Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
有权
非对称密集浮动非易失性存储器，具有去耦电容
- Patent Title: Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
- Patent Title (中): 非对称密集浮动非易失性存储器，具有去耦电容
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Application No.: US14594527Application Date: 2015-01-12
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Publication No.: US09406812B1Publication Date: 2016-08-02
- Inventor: Andrew E. Horch , Martin Luc Cecil Arthur Niset
- Applicant: Synopsys, Inc.
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Fenwick & West LLP
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/51 ; H01L29/45 ; H01L29/49 ; H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L21/265 ; H01L21/28
Abstract:
A nonvolatile memory (“NVM”) bitcell includes a source and a drain formed in an active region of a substrate and separated by a channel region in the active region. A gate stack formed over the substrate includes a gate formed on an oxide and at least one sidewall spacer formed around the gate. A charge trapping layer is formed on an opposite side of the sidewall spacer from the gate, where at least a portion of the charge trapping layer acts as a floating gate for the bitcell. The bitcell further includes a salicide block covering the floating gate portion of the charge trapping layer. An contact (sometimes referred to as a bar contact) physically contacts the salicide block above the floating gate portion of the charge trapping layer.
Public/Granted literature
- US20160204279A1 ASYMMETRIC DENSE FLOATING GATE NONVOLATILE MEMORY WITH DECOUPLED CAPACITOR Public/Granted day:2016-07-14
Information query
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