Invention Grant
- Patent Title: Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same
- Patent Title (中): 用于形成用于半导体衬底的钝化膜的材料，用于半导体衬底的钝化膜及其制造方法，以及光电池元件及其制造方法
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Application No.: US14269152Application Date: 2014-05-04
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Publication No.: US09406834B2Publication Date: 2016-08-02
- Inventor: Akihiro Orita , Masato Yoshida , Takeshi Nojiri , Yoichi Machii , Mitsunori Iwamuro , Shuichiro Adachi , Tetsuya Sato , Toru Tanaka
- Applicant: HITACHI CHEMICAL COMPANY, LTD.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fanelli Haag PLLC
- Priority: JP2011-118493 20110526; JP2011-118494 20110526; JP2011-141068 20110624; JP2012-055809 20120313
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L31/18 ; C08K3/22 ; C08K5/05 ; H01L23/29 ; H01L23/31 ; H01L31/0216 ; H01L31/068 ; C09D127/18 ; H01L21/02 ; H01L21/306 ; C08J5/24 ; C08K3/28 ; C08K3/34 ; B82Y10/00 ; H01L51/00 ; H01L51/05 ; H01L51/50
Abstract:
The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
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