Invention Grant
US09406836B2 Reducing or eliminating nanopipe defects in III-nitride structures
有权
减少或消除III族氮化物结构中的纳米管缺陷
- Patent Title: Reducing or eliminating nanopipe defects in III-nitride structures
- Patent Title (中): 减少或消除III族氮化物结构中的纳米管缺陷
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Application No.: US14413233Application Date: 2013-07-03
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Publication No.: US09406836B2Publication Date: 2016-08-02
- Inventor: Patrick Nolan Grillot , Isaac Harshman Wildeson , Tigran Nshanian , Parijan Pramil Deb
- Applicant: KONINKLIJKE PHILIPS N.V.
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2013/055446 WO 20130703
- International Announcement: WO2014/009856 WO 20140116
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/00 ; H01L33/02 ; H01L33/12 ; H01L33/32 ; H01L33/06 ; H01L33/20 ; H01L33/30 ; H01L33/62
Abstract:
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
Public/Granted literature
- US20150207024A1 REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES Public/Granted day:2015-07-23
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