Invention Grant
- Patent Title: Manufacturing method for piezoelectric resonator device
- Patent Title (中): 压电谐振器的制造方法
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Application No.: US14057076Application Date: 2013-10-18
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Publication No.: US09406868B2Publication Date: 2016-08-02
- Inventor: Naoki Kohda , Hiroki Yoshioka
- Applicant: DAISHINKU CORPORATION
- Applicant Address: JP Kakogawa-shi
- Assignee: DAISHINKU CORPORATION
- Current Assignee: DAISHINKU CORPORATION
- Current Assignee Address: JP Kakogawa-shi
- Agency: Mots Law, PLLC
- Priority: JP2008-326851 20081224
- Main IPC: H01L41/332
- IPC: H01L41/332 ; H01L41/23 ; H03H3/02 ; H01L41/25 ; H01L41/29 ; H01L41/33 ; H01L31/18 ; H03H9/05 ; H01L23/373 ; H03H9/10 ; H03H9/19 ; C23C8/40 ; C23C12/00 ; H03H3/04

Abstract:
A manufacturing method for a piezoelectric resonator device includes sequential steps of: (i) laminating a metal film constituted by at least two types of metals on at least one of a substrate of a joining region of a piezoelectric resonator plate, a substrate of a region of an upper lid member, and a substrate of a region of a lower lid member; (ii) promoting metal diffusion inside the metal film by heat processing; and (iii) roughening a surface of the substrate of the at least one of the piezoelectric resonator plate, the upper lid member, and the lower lid member by performing wet etching with an etchant caused to penetrate into the metal film and thereby forming a large number of micropores in the surface of the substrate of the at least one of the piezoelectric resonator plate, the upper lid member, and the lower lid member.
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