Invention Grant
- Patent Title: Magnetic memory device and method of fabricating the same
- Patent Title (中): 磁记忆装置及其制造方法
-
Application No.: US14319563Application Date: 2014-06-30
-
Publication No.: US09406873B2Publication Date: 2016-08-02
- Inventor: Shinhee Han , Daeeun Jeong , Yong Kwan Kim , Yoonjong Song
- Applicant: Shinhee Han , Daeeun Jeong , Yong Kwan Kim , Yoonjong Song
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2013-0092688 20130805
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L43/08 ; H01L27/22
Abstract:
Provided are a magnetic memory device and a method of fabricating the same. The device may include a cell selection device, a magnetic tunnel junction (MTJ), and a lower electrode connecting them. The lower electrode may include a vertical portion and a horizontal portion laterally extending from a side surface of the vertical portion. In the lower electrode, the vertical portion has a top surface higher than the horizontal portion and has a top surface including at least two parallel sides and other side at an angle thereto. The MTJ may be provided on the vertical portion of the lower electrode.
Public/Granted literature
- US20150035096A1 MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-02-05
Information query
IPC分类:
