Invention Grant
- Patent Title: Light emitting device
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Application No.: US14816654Application Date: 2015-08-03
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Publication No.: US09406903B2Publication Date: 2016-08-02
- Inventor: Shunpei Yamazaki , Toru Takayama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2001-332904 20011030; JP2002-143787 20020517
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L27/32 ; H01L51/00 ; H01L51/56 ; H01L51/50

Abstract:
An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.
Public/Granted literature
- US20150340651A1 Light Emitting Device Public/Granted day:2015-11-26
Information query
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