Invention Grant
- Patent Title: Current leakage mitigation
- Patent Title (中): 电流泄漏减轻
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Application No.: US14079755Application Date: 2013-11-14
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Publication No.: US09407252B2Publication Date: 2016-08-02
- Inventor: Hao-chieh Chan , Tsung-Hsin Yu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16

Abstract:
One or more circuits are provided wherein leakage current is mitigated. A circuit comprises a pad, a first transistor, a second transistor, a power leakage component and a data leakage component. The first transistor and the second transistor are respectively configured to control a voltage level at the pad. The first transistor is connected to the pad and to a first voltage source. The second transistor is connected to the pad and to a third voltage source. The power leakage component is connected between the first transistor and the pad. The data leakage component is connected between the second transistor and the pad. The power leakage component is configured to mitigate leakage current from the first transistor to the pad. The data leakage component is configured to mitigate leakage current from the pad to the second transistor.
Public/Granted literature
- US20150130530A1 CURRENT LEAKAGE MITIGATION Public/Granted day:2015-05-14
Information query
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