Invention Grant
US09407795B2 Method of reading out a CMOS image sensor and a CMOS image sensor configured for carrying out such method
有权
读出CMOS图像传感器的方法和配置用于执行这种方法的CMOS图像传感器
- Patent Title: Method of reading out a CMOS image sensor and a CMOS image sensor configured for carrying out such method
- Patent Title (中): 读出CMOS图像传感器的方法和配置用于执行这种方法的CMOS图像传感器
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Application No.: US14413328Application Date: 2012-07-13
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Publication No.: US09407795B2Publication Date: 2016-08-02
- Inventor: Willem Hendrik Maes
- Applicant: Willem Hendrik Maes
- Applicant Address: NL Eindhoven
- Assignee: Teledyne Dalsa B.V.
- Current Assignee: Teledyne Dalsa B.V.
- Current Assignee Address: NL Eindhoven
- Agency: Snell & Wilmer LLP
- International Application: PCT/EP2012/063798 WO 20120713
- International Announcement: WO2014/008946 WO 20140116
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/355 ; H04N5/374 ; H04N5/378

Abstract:
The invention relates to a method of reading out a CMOS image sensor. The method includes setting a pixel (Pxl) in a first mode (SS) and resetting the pixel (Pxl) so the predefined voltage (V-ref) is set over the photo-diode (Dde) and the first capacitance (C_low). The method further includes collecting charge carriers that reduce the pixel potential (Vp) on the photo-diode (Dde). The method further includes reading out the pixel (Pxl) while in the first mode (SS) and a second mode (LS), and storing the pixel potential (Vp). The method further includes resetting the pixel (Pxl) such that the predefined voltage (V_ref) is over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high). The method further includes reading out the pixel (Pxl) while in the second mode (LS) and the first mode (SS), and storing the pixel potential (Vp).
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