Invention Grant
- Patent Title: Substrate structures and methods of manufacture
- Patent Title (中): 基材结构和制造方法
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Application No.: US14534482Application Date: 2014-11-06
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Publication No.: US09408301B2Publication Date: 2016-08-02
- Inventor: Yusheng Lin , Sadamichi Takakusaki
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Adam R. Stephenson, Ltd.
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/14 ; H01L23/15 ; H05K1/03 ; H01L21/48 ; H05K1/09 ; H05K3/46 ; H05K3/06 ; H05K3/00

Abstract:
A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.
Public/Granted literature
- US20160135293A1 SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE Public/Granted day:2016-05-12
Information query
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