Invention Grant
- Patent Title: Substrate temperature adjusting method and a method of changing the temperature control range of a heater in a substrate processing apparatus
- Patent Title (中): 基板温度调节方法和改变基板处理装置中的加热器的温度控制范围的方法
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Application No.: US13772467Application Date: 2013-02-21
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Publication No.: US09410753B2Publication Date: 2016-08-09
- Inventor: Toshiyuki Makabe , Taketoshi Okajo
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-035308 20120221
- Main IPC: F28F27/00
- IPC: F28F27/00 ; F28F27/02 ; H01L21/67
Abstract:
A method which changes the temperature control range of a heater of a substrate processing apparatus. The temperature control range of a heater is changed or extended by changing the flow rate of the coolant flowing through a coolant channel from a first flow rate to a second flow rate which is smaller than the first flow rate, to change a first thermal conductivity of a mounting table to a second thermal conductivity which is smaller than the first thermal conductivity. The upper limit of the temperature control range is lower than the heat resistant temperature of a material of an adhesive of the mounting table.
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