Invention Grant
- Patent Title: Method of forming resist pattern
- Patent Title (中): 形成抗蚀剂图案的方法
-
Application No.: US13467549Application Date: 2012-05-09
-
Publication No.: US09411224B2Publication Date: 2016-08-09
- Inventor: Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
- Applicant: Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
- Applicant Address: JP Kawasaki-Shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2011-106577 20110511; JP2012-022408 20120203
- Main IPC: G03F7/22
- IPC: G03F7/22 ; G03F7/004 ; G03F7/039 ; G03F7/20 ; G03F7/26 ; G03F7/38
Abstract:
A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.
Public/Granted literature
- US20130017500A1 METHOD OF FORMING RESIST PATTERN Public/Granted day:2013-01-17
Information query
IPC分类:
