Invention Grant
US09411232B2 Composition for forming fine resist pattern, and pattern formation method using same
有权
用于形成精细抗蚀剂图案的组合物和使用其的图案形成方法
- Patent Title: Composition for forming fine resist pattern, and pattern formation method using same
- Patent Title (中): 用于形成精细抗蚀剂图案的组合物和使用其的图案形成方法
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Application No.: US14770694Application Date: 2014-03-14
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Publication No.: US09411232B2Publication Date: 2016-08-09
- Inventor: Tatsuro Nagahara , Takashi Sekito , Kazuma Yamamoto , Masakazu Kobayashi , Noboru Satake , Masahiro Ishii
- Applicant: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
- Applicant Address: LU Luxembourg
- Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
- Current Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agent Mitchell Brustein
- Priority: JP2013-043177 20130305
- International Application: PCT/JP2014/056983 WO 20140314
- International Announcement: WO2014/136991 WO 20140912
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/40 ; G03F7/09 ; H01L21/027 ; H01L21/768 ; C08L33/14 ; C09D139/04 ; G03F7/039 ; G03F7/16 ; G03F7/20 ; G03F7/32
Abstract:
The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.
Public/Granted literature
- US20160011508A1 COMPOSITION FOR FORMING FINE RESIST PATTERN, AND PATTERN FORMATION METHOD USING SAME Public/Granted day:2016-01-14
Information query
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