Invention Grant
US09411406B2 SRAM regulating retention scheme with discrete switch control and instant reference voltage generation
有权
具有分立开关控制和即时参考电压产生的SRAM调节保持方案
- Patent Title: SRAM regulating retention scheme with discrete switch control and instant reference voltage generation
- Patent Title (中): 具有分立开关控制和即时参考电压产生的SRAM调节保持方案
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Application No.: US13921475Application Date: 2013-06-19
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Publication No.: US09411406B2Publication Date: 2016-08-09
- Inventor: Bo Tang , Ajay Kumar Bhatia
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F1/32 ; G05F1/46
Abstract:
A system including control logic, a voltage reference, a sense amplifier, and a voltage supply circuit is presented. The sense amplifier may be configured to detect a current state of the voltage supply circuit output compared to the reference voltage. The voltage supply circuit may be configured to capture and preserve the current state to be used as a previous state. The voltage regulator may be configured to compare the current state to one or more previous states and adjust the voltage regulator output based on the comparison. Control logic may be configured to enable the voltage reference output in response to a signal. Control logic may be configured to enable the sense amplifier at a time after the voltage reference is stable. Control logic may be configured to disable the voltage reference output in response to the sense amplifier generating an output.
Public/Granted literature
- US20140380068A1 SRAM Regulating Retention Scheme with Discrete Switch Control and Instant Reference Voltage Generation Public/Granted day:2014-12-25
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