Invention Grant
US09411521B2 Method and apparatus for improving sequential memory read preformance
有权
用于改善顺序存储器读取预处理的方法和装置
- Patent Title: Method and apparatus for improving sequential memory read preformance
- Patent Title (中): 用于改善顺序存储器读取预处理的方法和装置
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Application No.: US14291998Application Date: 2014-05-30
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Publication No.: US09411521B2Publication Date: 2016-08-09
- Inventor: Hsing-Chen Lu , Pochao Fang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C8/04
- IPC: G11C8/04 ; G06F3/06 ; G11C8/18 ; G06F12/02

Abstract:
The present technology is directed to a method for accessing a memory device in response to read requests is described. The method comprises, in response to a first request, composing a first read sequence using a command protocol of the memory device. The first read sequence includes a command code and a starting physical address. Upon receipt of a second request, the method determines a starting physical address of a second read sequence according to the command protocol of the memory device. If the starting physical address of the second read sequence is sequential to an ending physical address of the first read sequence, then the method composes the second read sequence using the command protocol without a command code, else the method composes the second read sequence using the command protocol with a read command.
Public/Granted literature
- US20150347027A1 METHOD AND APPARATUS FOR IMPROVING MEMORY READ PERFORMANCE Public/Granted day:2015-12-03
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