Invention Grant
US09411686B2 Methods for accessing a storage unit of a flash memory and apparatuses using the same
有权
访问闪速存储器的存储单元的方法和使用其的装置
- Patent Title: Methods for accessing a storage unit of a flash memory and apparatuses using the same
- Patent Title (中): 访问闪速存储器的存储单元的方法和使用其的装置
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Application No.: US14331591Application Date: 2014-07-15
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Publication No.: US09411686B2Publication Date: 2016-08-09
- Inventor: Tsung-Chieh Yang , Yang-Chih Shen , Sheng-I Hsu
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei
- Agency: Wang Law Firm, Inc.
- Priority: TW102148610A 20131227
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10
Abstract:
An embodiment of a method for accessing a storage unit of a flash memory, performed by a processing unit, includes at least the following steps. After all messages within a RAID (Redundant Array of Independent Disk) group are programmed, it is determined whether a vertical ECC (Error Correction Code) within the RAID group has been generated. The processing unit directs a DMA (Direct Memory Access) controller to obtain the vertical ECC from a DRAM (Dynamic Random Access Memory) and store the vertical ECC to a buffer when the vertical ECC within the RAID group has been generated, thereby enabling the vertical ECC to be programmed to the storage unit.
Public/Granted literature
- US20150058700A1 Methods for Accessing a Storage Unit of a Flash Memory and Apparatuses using the Same Public/Granted day:2015-02-26
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