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US09411921B2 FET-bounding for fast TCAD-based variation modeling 有权
用于快速基于TCAD的变异建模的FET限制

FET-bounding for fast TCAD-based variation modeling
Abstract:
A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.
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