Invention Grant
- Patent Title: FET-bounding for fast TCAD-based variation modeling
- Patent Title (中): 用于快速基于TCAD的变异建模的FET限制
-
Application No.: US13457722Application Date: 2012-04-27
-
Publication No.: US09411921B2Publication Date: 2016-08-09
- Inventor: Rajiv V. Joshi , Rouwaida N. Kanj , Keunwoo Kim
- Applicant: Rajiv V. Joshi , Rouwaida N. Kanj , Keunwoo Kim
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.
Public/Granted literature
- US20130289965A1 FET-BOUNDING FOR FAST TCAD-BASED VARIATION MODELING Public/Granted day:2013-10-31
Information query