Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14500343Application Date: 2014-09-29
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Publication No.: US09412060B2Publication Date: 2016-08-09
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2007-195497 20070727
- Main IPC: H01L39/00
- IPC: H01L39/00 ; G06K19/077 ; H01L23/29 ; H01L23/31

Abstract:
A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
Public/Granted literature
- US20150014419A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-01-15
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