Invention Grant
- Patent Title: Tunnel magnetoresistance read head with narrow shield-to-shield spacing
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Application No.: US14740027Application Date: 2015-06-15
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Publication No.: US09412400B2Publication Date: 2016-08-09
- Inventor: Rongfu Xiao , Guanxiong Li , Zhihong Zhang , Ming Mao , Chen-Jung Chien
- Applicant: Western Digital (Fremont), LLC
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G01R33/09 ; G11B5/31 ; H01L43/12
Abstract:
A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
Public/Granted literature
- US20150279393A1 TUNNEL MAGNETORESISTANCE READ HEAD WITH NARROW SHIELD-TO-SHIELD SPACING Public/Granted day:2015-10-01
Information query
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