A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.