Invention Grant
- Patent Title: Hybrid TFET-MOSFET circuit design
- Patent Title (中): 混合型TFET-MOSFET电路设计
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Application No.: US14599327Application Date: 2015-01-16
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Publication No.: US09412439B1Publication Date: 2016-08-09
- Inventor: Ming-Long Fan , Pi-Ho Hu , Yin-Nien Chen , Pin Su , Ching-Te (Kent) Chuang , Samuel C. Pan
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. , National Chiao Tung University
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G11C11/41
- IPC: G11C11/41 ; G11C11/419 ; G11C11/412 ; G11C11/417
Abstract:
A circuit includes a hybrid switch, which includes a Tunnel Field-Effect Transistor (TFET) having a first source, a first drain, and a first gate. The hybrid switch further includes a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) connected to the TFET in parallel, with the MOSFET including a second source connected to the first source, a second drain connected to the first drain, and a second gate connected to the first gate.
Public/Granted literature
- US20160211838A1 HYBRID TFET-MOSFET CIRCUIT DESIGN Public/Granted day:2016-07-21
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