The invention concerns a circuit comprising: a C-element having first and second input nodes and first and second inverters (110, 112) cross-coupled between first and second complementary storage nodes (Q, Z), the second storage node (Z) forming an output node of the C-element; and a non-volatile memory comprising: a first resistive element (202) having a first terminal coupled to the first storage node (Q); a second resistive element (204) having a first terminal coupled to the second storage node (Z), at least one of the first and second resistive elements being programmable to have one of at least two resistive states (Rmin, Rmax), wherein a second terminal of the first resistive element (202) is coupled to a second terminal of the second resistive element (204) via a first transistor (210); and a control circuit (232).