Invention Grant
US09412580B2 Methods for forming group III-nitride materials and structures formed by such methods
有权
通过这种方法形成III族氮化物材料和结构的方法
- Patent Title: Methods for forming group III-nitride materials and structures formed by such methods
- Patent Title (中): 通过这种方法形成III族氮化物材料和结构的方法
-
Application No.: US13988996Application Date: 2011-11-23
-
Publication No.: US09412580B2Publication Date: 2016-08-09
- Inventor: Chantal Arena , Ronald Thomas Bertram, Jr. , Ed Lindow , Subhash Mahajan , Fanyu Meng
- Applicant: Chantal Arena , Ronald Thomas Bertram, Jr. , Ed Lindow , Subhash Mahajan , Fanyu Meng
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1060242 20101208
- International Application: PCT/EP2011/070794 WO 20111123
- International Announcement: WO2012/069530 WO 20120531
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B25/02 ; C30B29/40 ; H01L29/20
Abstract:
Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.
Public/Granted literature
- US20130234157A1 METHODS FOR FORMING GROUP III-NITRIDE MATERIALS AND STRUCTURES FORMED BY SUCH METHODS Public/Granted day:2013-09-12
Information query
IPC分类:
