Invention Grant
- Patent Title: Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device
- Patent Title (中): 反应管，基板处理装置以及半导体装置的制造方法
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Application No.: US14665781Application Date: 2015-03-23
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Publication No.: US09412582B2Publication Date: 2016-08-09
- Inventor: Takafumi Sasaki , Kazuhiro Morimitsu , Eisuke Nishitani , Tetsuo Yamamoto , Masanao Fukuda
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-060039 20140324
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/02 ; C23C16/458 ; C23C16/455
Abstract:
A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.
Public/Granted literature
- US20150270125A1 REACTION TUBE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-09-24
Information query
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