Invention Grant
- Patent Title: Manufacturing method for semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US14572490Application Date: 2014-12-16
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Publication No.: US09412599B2Publication Date: 2016-08-09
- Inventor: Hiroshi Ishida , Kazuhiko Sato
- Applicant: Synaptics Display Devices GK
- Applicant Address: JP Tokyo
- Assignee: Synaptics Display Devices GK
- Current Assignee: Synaptics Display Devices GK
- Current Assignee Address: JP Tokyo
- Agency: Patterson + Sheridan, LLP
- Priority: JP2013-259910 20131217
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/51 ; H01L21/28 ; H01L29/66 ; H01L21/8234 ; H01L29/792 ; H01L21/265 ; H01L29/49
Abstract:
A gate oxide film is formed in a region having a MOSFET on a semiconductor substrate formed therein, and a first polysilicon film serving as a gate electrode of the MOSFET is further formed. Thereafter, a charge storage three-layer film is formed by opening a region having a MONOS type FET formed therein, exposing a semiconductor surface of the semiconductor substrate, and sequentially depositing a first potential barrier film, a charge storage film, and a second potential barrier film. In this case, before the charge storage three-layer film is formed, an anti-oxidation film is formed on the first polysilicon film.
Public/Granted literature
- US20150171102A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2015-06-18
Information query
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