A method of treating one or more wafers is provided. The method comprises the steps of: a) providing at least one wafer, that has first and second opposed major faces and at least one feature, such as a metal silicide, that is sensitive to a neutralizing chemistry on the first major face; b) causing an acidic chemistry, such as a sulfuric acid and/or phosphoric acid, to contact the first major face of the wafer and causing the wafer to spin; c) after causing the acidic chemistry to contact the wafer, causing a non-etching rinsing fluid to contact the first major face while the wafer is spinning; and d) during at least a portion of the time that the non-etching rinsing fluid is caused to contact the first major face of the spinning wafer, causing a neutralizing liquid to contact the second major face of the spinning wafer.