Invention Grant
- Patent Title: Device wafer processing method
- Patent Title (中): 设备晶圆处理方法
-
Application No.: US14486416Application Date: 2014-09-15
-
Publication No.: US09412637B2Publication Date: 2016-08-09
- Inventor: Kazuma Sekiya
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2013-199374 20130926
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/683 ; H01L21/67

Abstract:
A device wafer includes a device area where a plurality of devices are formed on the front side of the device wafer and a peripheral marginal area surrounding the device area. Each device has an adhesion disliking region disliking adhesion to an adhesive tape. An ultraviolet curable protective tape is attached as the adhesive tape to the front side of the device wafer. Ultraviolet radiation is applied to a first area of the protective tape corresponding to the adhesion disliking region of the device wafer to thereby reduce the adhesive force in the first area. The ultraviolet radiation is not applied to a second area of the protective tape corresponding to the peripheral marginal area of the device wafer to thereby maintain the adhesive force in the second area. The device wafer is held through the protective tape while the back side of the device wafer is ground.
Public/Granted literature
- US20150087207A1 DEVICE WAFER PROCESSING METHOD Public/Granted day:2015-03-26
Information query
IPC分类: