Invention Grant
US09412640B2 Semiconductor device including substrate contact and related method
有权
包括衬底接触的半导体器件和相关方法
- Patent Title: Semiconductor device including substrate contact and related method
- Patent Title (中): 包括衬底接触的半导体器件和相关方法
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Application No.: US13749830Application Date: 2013-01-25
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Publication No.: US09412640B2Publication Date: 2016-08-09
- Inventor: Karen A. Nummy , Ravi M. Todi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/74 ; H01L29/94
Abstract:
A method of forming a contact on a semiconductor device is disclosed. The method includes: forming a mask on the semiconductor device, the mask exposing at least one contact node disposed within a trench in a substrate of the semiconductor device; performing a first substrate contact etch on the semiconductor device, the first substrate contact etch recessing the exposed contact node within the trench;removing a set of node films disposed above the exposed contact node and on the sides of the trench; and forming a contact region within the trench above the exposed contact node, the contact region contacting the substrate.
Public/Granted literature
- US20140213053A1 SEMICONDUCTOR DEVICE INCLUDING SUBSTRATE CONTACT AND RELATED METHOD Public/Granted day:2014-07-31
Information query
IPC分类:
