A method of fabricating a fin field effect transistor (FinFET) device and the device are described. The method includes forming a deep STI region adjacent to a first side of an end fin among a plurality of fins and lining the deep STI region, including the first side of the end fin, with a passivation layer. The method also includes depositing an STI oxide into the deep STI region, the passivation layer separating the STI oxide and the first side of the end fin, etching back the passivation layer separating the STI oxide and the first side of the end fin to a specified depth to create a gap, and depositing gate material, the gate material covering the gap.