Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14943706Application Date: 2015-11-17
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Publication No.: US09412657B2Publication Date: 2016-08-09
- Inventor: Huicai Zhong , Chao Zhao , Huilong Zhu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: BainwoodHuang
- Priority: CN201410748850 20141209
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768

Abstract:
In a method for manufacturing a semiconductor, a Through Silicon Via (TSV) template wafer and production wafers form a sandwich structure, in which the TSV template wafer has TSV structures uniformly distributed therein, for providing electrical connection between the production wafers to form 3D interconnection. The TSV template wafer is obtained by thinning a semiconductor wafer, which facilitates reducing the difficulty in etching and filling. Connection parts are provided on the TSV template wafer, for convenience of interconnection between the overlying and underlying production wafers, which facilitates reducing the difficulty in alignment and improving the convenience of design of electrical connection for 3D devices.
Public/Granted literature
- US20160163592A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
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