Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US14731331Application Date: 2015-06-04
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Publication No.: US09412665B2Publication Date: 2016-08-09
- Inventor: Sung Soo Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0096486 20120831
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/78 ; H01L27/108 ; H01L29/423 ; H01L29/51 ; H01L21/283 ; H01L21/306 ; H01L21/3205 ; H01L21/3213 ; H01L29/49 ; H01L29/66
Abstract:
A semiconductor device and a method for manufacturing the same are capable of improving GIDL in a buried gate, and preventing degradation of device characteristics and reliability due to reduction in gate resistance. The semiconductor device may include: junction regions formed at both sidewalls of a trench formed in a semiconductor substrate; a first gate electrode formed in a lower portion of the trench; a second gate electrode formed on at least one inner sidewall of the trench which overlaps one of the junction regions on the first gate electrode; and a third gate electrode formed on one side of the second gate electrode on the first gate electrode.
Public/Granted literature
- US20150270362A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-09-24
Information query
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