Invention Grant
US09412666B2 Equal gate height control method for semiconductor device with different pattern densites
有权
具有不同图案密度的半导体器件的等门高度控制方法
- Patent Title: Equal gate height control method for semiconductor device with different pattern densites
- Patent Title (中): 具有不同图案密度的半导体器件的等门高度控制方法
-
Application No.: US14938372Application Date: 2015-11-11
-
Publication No.: US09412666B2Publication Date: 2016-08-09
- Inventor: Chao-Cheng Chen , Ming-Jie Huang , Yu Chao Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/8234 ; H01L21/3115 ; H01L21/28 ; H01L21/321 ; H01L29/66
Abstract:
A method of forming a semiconductor integrated circuit (IC) includes forming a first semiconductor layer over a substrate, the first semiconductor layer having an uneven upper surface, forming a stop layer over the first semiconductor layer, the first semiconductor layer disposed between the substrate and the stop layer, and treating the stop layer to change its etch selectivity relative to the first semiconductor layer.
Public/Granted literature
- US20160126142A1 Equal Gate Height Control Method for Semiconductor Device with Different Pattern Densites Public/Granted day:2016-05-05
Information query
IPC分类:
