A through-silicon via access device (TSVAD) for establishing an electrical connection to a through-silicon via (TSV) located in a planar stack of semiconductor chips is disclosed. The TSVAD may include a switching circuit, having a conductive pad terminal, a TSV terminal, an input terminal coupled to a sending logic circuit, an output terminal coupled to a receiving logic circuit, and logic devices to, in response to control signals, couple the TSV terminal to the conductive pad terminal, in one configuration, and couple the TSV terminal to another terminal in another configuration. The TSVAD may also include a control circuit to generate control signals to cause an input selection circuit to drive a signal from the sending logic circuit onto the input terminal, and to cause an output selection circuit to drive a logic signal from the output terminal to the receiving logic circuit.