Invention Grant
- Patent Title: Treatment method of electrodeposited copper for wafer-level-packaging process flow
- Patent Title (中): 晶片级封装工艺流程的电沉积铜处理方法
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Application No.: US13744335Application Date: 2013-01-17
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Publication No.: US09412713B2Publication Date: 2016-08-09
- Inventor: Bryan L. Buckalew , Steven T Mayer , Thomas Ponnuswamy , David Porter
- Applicant: Novellus Systems, Inc.
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson, LLP
- Main IPC: H05H3/00
- IPC: H05H3/00 ; H01L23/00 ; H01L21/67 ; C25D3/38 ; C25D5/10 ; C25D5/50 ; H01L21/288 ; C25D3/60 ; C25D17/00
Abstract:
A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal. The interface can have improved resistance to interfacial voiding. The copper containing structure is configured to deliver current between one or more ports and one or more solder structures in the integrated circuit package. Annealing the copper containing structure can move impurities and vacancies to the surface of the copper containing structure for subsequent removal.
Public/Granted literature
- US20140197037A1 TREATMENT METHOD OF ELECTRODEPOSITED COPPER FOR WAFER-LEVEL-PACKAGING PROCESS FLOW Public/Granted day:2014-07-17
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