Invention Grant
- Patent Title: Multiheight electrically conductive via contacts for a multilevel interconnect structure
- Patent Title (中): 多层导电通孔用于多层互连结构
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Application No.: US14501441Application Date: 2014-09-30
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Publication No.: US09412753B2Publication Date: 2016-08-09
- Inventor: Keisuke Izumi , Michiaki Sano , Hiroshi Sasaki
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L27/115 ; H01L21/768
Abstract:
A method of making multi-level contacts includes providing an in-process multilevel device having a device region and a contact region including a stack of a plurality of alternating sacrificial layers and insulator layers located over a major surface of a substrate. A contact mask with at least one contact mask opening and at least one first terrace mask opening is provided over the stack, where the at least one first terrace mask opening is larger than the at least one contact mask opening. At least one first contact opening and at least one first terrace opening are simultaneously formed extending substantially perpendicular to the major surface of the substrate through the stack to a first sacrificial layer by etching a portion of the stack through the at least one contact mask opening and the at least one first terrace mask opening. A first electrically conductive via contact is deposited in the at least one first contact opening.
Public/Granted literature
- US20160093626A1 MULTIHEIGHT ELECTRICALLY CONDUCTIVE VIA CONTACTS FOR A MULTILEVEL INTERCONNECT STRUCTURE Public/Granted day:2016-03-31
Information query
IPC分类:
