Invention Grant
- Patent Title: Method of manufacturing thin film transistor and method of manufacturing display substrate having the same
- Patent Title (中): 制造薄膜晶体管的方法及其制造方法
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Application No.: US14793966Application Date: 2015-07-08
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Publication No.: US09412771B2Publication Date: 2016-08-09
- Inventor: Soyoung Koo , Myounghwa Kim , Sangho Park , Jun Hyung Lim , Masataka Kano
- Applicant: Samsung Display Co., Ltd
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2014-0086195 20140709
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/12 ; H01L29/66 ; H01L21/02 ; H01L21/477 ; H01L29/24
Abstract:
A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.
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