Invention Grant
- Patent Title: Compound semiconductor device and method of manufacturing the same
- Patent Title (中): 化合物半导体器件及其制造方法
-
Application No.: US13845033Application Date: 2013-03-17
-
Publication No.: US09412812B2Publication Date: 2016-08-09
- Inventor: Toshihide Kikkawa
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2012-077192 20120329
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/06 ; H01L21/76 ; H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L21/28 ; H01L21/762 ; H01L21/02 ; H01L29/20 ; H01L29/51
Abstract:
An AlGaN/GaN HEMT includes a compound semiconductor stack structure; an element isolation structure which demarcates an element region on the compound semiconductor stack structure; a first insulating film which is formed on the element region and is not formed on the element isolation structure; a second insulating film which is formed on at least the element isolation structure and is higher in hydrogen content than the first insulating film; and a gate electrode which is formed on the element region of the compound semiconductor stack structure via the second insulating film.
Public/Granted literature
- US20130256829A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-10-03
Information query
IPC分类:
