The present disclosure relates to a semiconductor device having a delta doped sheet layer within a transistor's source/drain region to reduce contact resistance, and an associated method. In some embodiments, a dielectric layer is disposed over the transistor. A trench is disposed through the dielectric layer to the source/drain region and a conductive contact is disposed in the trench. The source/drain region comprises a delta doped sheet layer with a doping concentration that is higher than rest of the source/drain region.