Invention Grant
- Patent Title: Method for embedded diamond-shaped stress element
- Patent Title (中): 嵌入式菱形应力元素的方法
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Application No.: US14285967Application Date: 2014-05-23
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Publication No.: US09412843B2Publication Date: 2016-08-09
- Inventor: Eric C. Harley , Judson R. Holt , Jin Z. Wallner , Thomas A. Wallner
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Erik K. Johnson; Steven Meyers
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/66 ; H01L21/308 ; H01L29/08 ; H01L29/165
Abstract:
A method of manufacturing a semiconductor device with an embedded layer, by anisotropically etching a substrate adjacent to an already formed gate structure. A dummy layer is deposited in the previously etched region, and a second spacer is formed next to the first spacer. The dummy layer is removed, and a second anisotropic etch is performed. A semiconductor substrate is then epitaxially grown in the etched out region to form the embedded layer.
Public/Granted literature
- US20150340465A1 METHOD FOR EMBEDDED DIAMOND-SHAPED STRESS ELEMENT Public/Granted day:2015-11-26
Information query
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