Low-temperature fabrication of nanomaterial-derived metal composite thin films

Invention Grant

US09412852B2 Low-temperature fabrication of nanomaterial-derived metal composite thin films 有权

Title translation: 纳米材料衍生金属复合薄膜的低温制造

Patent Title: Low-temperature fabrication of nanomaterial-derived metal composite thin films
Patent Title (中): 纳米材料衍生金属复合薄膜的低温制造
Application No.: US14606014

Application Date: 2015-01-26
Publication No.: US09412852B2

Publication Date: 2016-08-09
Inventor: Antonio Facchetti , Tobin J. Marks , Mercouri G. Kanatzidis , Myung-Gil Kim , William Christopher Sheets , He Yan , Yu Xia
Applicant: Northwestern University , Polyera Corporation
Applicant Address: US IL Evanston US IL Skokie
Assignee: Northwestern University,Polyera Corporatoin
Current Assignee: Northwestern University,Polyera Corporatoin
Current Assignee Address: US IL Evanston US IL Skokie
Agent Karen K. Chan
Main IPC: H01L21/441
IPC: H01L21/441 ; H01L21/02 ; H01L29/66 ; C23C18/12 ; H01L21/285 ; H01L29/786 ; H01L21/443 ; H01L21/477 ; H01L29/45 ; H01L29/51

Abstract:

Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (

Abstract(Chinese):

公开了在低温（<400℃）下通过溶液工艺制造纳米材料衍生的金属复合薄膜的新方法。本薄膜可用作薄膜半导体，薄膜电介质或薄膜导体，并且可以实现为诸如薄膜晶体管和薄膜光伏器件的半导体器件。

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的
H01L21/441	.....用于电极的导电材料或绝缘材料的沉积