Invention Grant
- Patent Title: Multi-layer gate dielectric
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Application No.: US14054778Application Date: 2013-10-15
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Publication No.: US09412860B2Publication Date: 2016-08-09
- Inventor: Gang Bai
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/51 ; H01L21/28
Abstract:
A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first dielectric constant.
Public/Granted literature
- US20140042560A1 MULTI-LAYER GATE DIELECTRIC Public/Granted day:2014-02-13
Information query
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