Invention Grant
- Patent Title: Schottky diode with improved surge capability
- Patent Title (中): 具有改善浪涌能力的肖特基二极管
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Application No.: US12903077Application Date: 2010-10-12
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Publication No.: US09412880B2Publication Date: 2016-08-09
- Inventor: Rossano Carta , Luigi Merlin , Laura Bellemo
- Applicant: Rossano Carta , Luigi Merlin , Laura Bellemo
- Applicant Address: US CA Santa Clara
- Assignee: Vishay-Siliconix
- Current Assignee: Vishay-Siliconix
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/872 ; H01L23/495 ; H01L29/06 ; H01L29/16
Abstract:
An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
Public/Granted literature
- US20110248284A1 SCHOTTKY DIODE WITH IMPROVED SURGE CAPABILITY Public/Granted day:2011-10-13
Information query
IPC分类:
