Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13548822Application Date: 2012-07-13
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Publication No.: US09412908B2Publication Date: 2016-08-09
- Inventor: Hwan Hee Jeong
- Applicant: Hwan Hee Jeong
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0113227 20081114
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/40 ; H01L33/62 ; H01L33/38

Abstract:
Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.
Public/Granted literature
- US20120280268A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2012-11-08
Information query
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