Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13030453Application Date: 2011-02-18
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Publication No.: US09412910B2Publication Date: 2016-08-09
- Inventor: Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
- Applicant: Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-177403 20100806
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/44

Abstract:
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.
Public/Granted literature
- US20120032214A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2012-02-09
Information query
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