Invention Grant
- Patent Title: Optical tuning of light emitting semiconductor junctions
- Patent Title (中): 发光半导体结的光学调谐
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Application No.: US14325131Application Date: 2014-07-07
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Publication No.: US09412911B2Publication Date: 2016-08-09
- Inventor: Petar Atanackovic
- Applicant: THE SILANNA GROUP PTY LTD.
- Applicant Address: AU Eight Mile Plains, Queensland
- Assignee: The Silanna Group Pty Ltd
- Current Assignee: The Silanna Group Pty Ltd
- Current Assignee Address: AU Eight Mile Plains, Queensland
- Agency: The Mueller Law Office, P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/44 ; H01L33/20 ; H01L33/32 ; H01L33/30 ; H01L27/15

Abstract:
Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.
Public/Granted literature
- US20150014723A1 OPTICAL TUNING OF LIGHT EMITTING SEMICONDUCTOR JUNCTIONS Public/Granted day:2015-01-15
Information query
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