Invention Grant
US09412927B2 Formation of a thermopile sensor utilizing CMOS fabrication techniques
有权
使用CMOS制造技术形成热电堆传感器
- Patent Title: Formation of a thermopile sensor utilizing CMOS fabrication techniques
- Patent Title (中): 使用CMOS制造技术形成热电堆传感器
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Application No.: US14573156Application Date: 2014-12-17
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Publication No.: US09412927B2Publication Date: 2016-08-09
- Inventor: Arvin Emadi , Stanley Barnett
- Applicant: Maxim Integrated Products, Inc.
- Applicant Address: US CA San Jose
- Assignee: Maxim Integrated Products, Inc.
- Current Assignee: Maxim Integrated Products, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Advent, LLP
- Agent Kevin E. West
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L31/0232 ; H01L21/00 ; G01J5/20 ; H01L27/14 ; H01L35/00 ; H01L35/34 ; H01L35/14 ; H01L35/04 ; G01J5/12 ; H01L27/146 ; G01J5/08 ; H01L35/32
Abstract:
Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.
Public/Granted literature
- US20150325770A1 FORMATION OF A THERMOPILE SENSOR UTILIZING CMOS FABRICATION TECHNIQUES Public/Granted day:2015-11-12
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