Invention Grant
- Patent Title: Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array
- Patent Title (中): 制造磁隧道结和3-D磁隧道结阵列的方法
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Application No.: US14846962Application Date: 2015-09-07
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Publication No.: US09412935B1Publication Date: 2016-08-09
- Inventor: Yeu-Chung Lin
- Applicant: Yeu-Chung Lin
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan D. Kamrath
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08

Abstract:
A method for fabricating a magnetic tunnel junction cell includes steps of providing a substrate having an active surface, forming a tunnel layer, a fixed layer and a first electrode, forming a U-shaped free layer having a vertical portion substantially perpendicular to the active surface, and forming a second electrode embedded in the U-shaped free layer. The fixed layer lines an inner surface of a through hole substantially perpendicular to the active surface and the first electrode fills the through hole. The tunnel layer may line the inner surface of the through hole or be U-shaped lining an inner surface of the U-shaped free layer. The fixed layer, the tunnel layer and the U-shaped free layer constitute a magnetic tunnel junction.
Information query
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