Invention Grant
US09412935B1 Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array 有权
制造磁隧道结和3-D磁隧道结阵列的方法

  • Patent Title: Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array
  • Patent Title (中): 制造磁隧道结和3-D磁隧道结阵列的方法
  • Application No.: US14846962
    Application Date: 2015-09-07
  • Publication No.: US09412935B1
    Publication Date: 2016-08-09
  • Inventor: Yeu-Chung Lin
  • Applicant: Yeu-Chung Lin
  • Agency: Kamrath IP Lawfirm, P.A.
  • Agent Alan D. Kamrath
  • Main IPC: H01L43/12
  • IPC: H01L43/12 H01L43/08
Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array
Abstract:
A method for fabricating a magnetic tunnel junction cell includes steps of providing a substrate having an active surface, forming a tunnel layer, a fixed layer and a first electrode, forming a U-shaped free layer having a vertical portion substantially perpendicular to the active surface, and forming a second electrode embedded in the U-shaped free layer. The fixed layer lines an inner surface of a through hole substantially perpendicular to the active surface and the first electrode fills the through hole. The tunnel layer may line the inner surface of the through hole or be U-shaped lining an inner surface of the U-shaped free layer. The fixed layer, the tunnel layer and the U-shaped free layer constitute a magnetic tunnel junction.
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