Invention Grant
US09412952B2 Photoelectric conversion element and method of using the same, image sensor, and optical sensor
有权
光电转换元件及其使用方法,图像传感器和光学传感器
- Patent Title: Photoelectric conversion element and method of using the same, image sensor, and optical sensor
- Patent Title (中): 光电转换元件及其使用方法,图像传感器和光学传感器
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Application No.: US14181308Application Date: 2014-02-14
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Publication No.: US09412952B2Publication Date: 2016-08-09
- Inventor: Eiji Fukuzaki , Kimiatsu Nomura
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2011-178047 20110816
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/44 ; B82Y10/00 ; C09B3/14 ; C09B3/78 ; H01L51/42

Abstract:
A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group. The electron-blocking layer includes a compound A having a residue after removal of at least one group of Ra1 to Ra9 from a compound represented by general formula (A) and having a glass transition point (Tg) of 200° C. or more. The photoelectric conversion element exhibits high photoelectric conversion efficiency and low dark current characteristics even after heating treatment, and can be manufactured with high productivity.
Public/Granted literature
- US20140158859A1 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF USING THE SAME, IMAGE SENSOR, AND OPTICAL SENSOR Public/Granted day:2014-06-12
Information query
IPC分类: