Invention Grant
- Patent Title: Protection circuit and a gate driving circuitry
- Patent Title (中): 保护电路和门驱动电路
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Application No.: US14394675Application Date: 2012-04-19
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Publication No.: US09413160B2Publication Date: 2016-08-09
- Inventor: Yuan Gao , Patrice Besse , Thierry Laplagne
- Applicant: Yuan Gao , Patrice Besse , Thierry Laplagne
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- International Application: PCT/IB2012/001611 WO 20120419
- International Announcement: WO2013/156811 WO 20131024
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H9/04 ; H02H3/28 ; H03K17/082 ; H03K17/10

Abstract:
A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signal insulation switch for disconnecting the common gate of the p-type back-to-back MOS switch from the received input driving signal when the voltage of the common gates is larger than the supply voltage of the circuit. The circuit further comprises a gate source coupling switch for coupling a voltage received at the common source of the p-type back-to-back MOS switch to the common gate if a received voltage at the common sources is larger than a reference voltage Vref.
Public/Granted literature
- US20150098160A1 PROTECTION CIRCUIT AND A GATE DRIVING CIRCUITRY Public/Granted day:2015-04-09
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