Invention Grant
- Patent Title: Critical chamber component surface improvement to reduce chamber particles
- Patent Title (中): 临界室组分表面改善以减少室颗粒
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Application No.: US14623402Application Date: 2015-02-16
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Publication No.: US09428424B2Publication Date: 2016-08-30
- Inventor: Ren-Guan Duan , Juan Carlos Rocha-Alvarez , Ramprakash Sankarakrishnan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: B01J19/12
- IPC: B01J19/12 ; C04B41/00 ; F27D19/00 ; F27D7/06 ; C04B41/80 ; C23C14/56 ; C23C16/44 ; F27B17/00 ; C04B35/111 ; C04B35/488 ; C04B35/50 ; C04B35/505 ; C04B35/565 ; C04B35/581 ; C04B35/587 ; C03C23/00

Abstract:
Embodiments described herein generally relate to apparatus and methods for thermally treating chamber components for use in ultraviolet semiconductor processing chambers. Thermal treatment of chamber components comprising unitary ceramic or glass articles may reduce the probability of particle generation when the chamber components are exposed to corrosive environments, such as exposure to ultraviolet light and ozone/oxygen radicals. A method of thermally treating chamber components includes heating the unitary article at an acceptable ramp rate to a desired temperature for a desired time period and subsequently cooling the unitary article at the ramping rate.
Public/Granted literature
- US20150251961A1 CRITICAL CHAMBER COMPONENT SURFACE IMPROVEMENT TO REDUCE CHAMBER PARTICLES Public/Granted day:2015-09-10
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