Invention Grant
US09431062B2 Nonvolatile memory device and method of driving word line of the nonvolatile memory
有权
非易失性存储器件和驱动非易失性存储器字线的方法
- Patent Title: Nonvolatile memory device and method of driving word line of the nonvolatile memory
- Patent Title (中): 非易失性存储器件和驱动非易失性存储器字线的方法
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Application No.: US14567652Application Date: 2014-12-11
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Publication No.: US09431062B2Publication Date: 2016-08-30
- Inventor: Sang-Won Park , Kitae Park , Sang-Won Shim
- Applicant: Sang-Won Park , Kitae Park , Sang-Won Shim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0012171 20140203
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/10 ; G11C16/08 ; G11C16/30 ; G11C16/32 ; G11C5/02 ; G11C8/08 ; G11C7/04 ; G11C11/56 ; G11C16/04
Abstract:
A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
Public/Granted literature
- US20150221351A1 NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING WORD LINE OF THE NONVOLATILE MEMORY Public/Granted day:2015-08-06
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